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Electrical Specifications
TC
=25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
VF
-
-
3.2
V
C --2.6V
IR
-
-
250
μA
C- - 1mA
trr
- - 65ns
- - 85 ns
ta
- 48 - ns
tb
IF = 30 A
IF =30 A,TC =150o
VR = 1200 V
VR = 1200 V, TC =150o
IF =1 A, di
F/dt = 100 A/μs
IF =30 A,di
F/dt = 100 A/μs
IF =30 A,di
F/dt = 100 A/μs
IF =30 A,di
F/dt = 100 A/μs
- 22 - ns
RθJC
--1.2oC/W
DEFINITIONS
VF
=
Instantaneous
forward
voltage
(pw
=
300
μs,
D
=
2%).
IR
= Instantaneous reverse current.
Trr
=
Reverse
recovery
time
(See
Figure
6),
summation
of
ta
+tb.
ta
=
Time
to
reach
peak
reverse
current
(See
Figure
6).
tb
=Time
from
peak
IRM
to
projected
zero
crossing
of
IRM
basedonastraightlinefrompeakIRM
through
25%
of
IRM
(See
Figure
6).
RθJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
200
100
10
1
I
F
, FORWARD CURRENT (A)
0
VF, FORWARD VOLTAGE (V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
175oC
100oC
25oC
500
100
10
1.0
0.1
0.01
0.001
0 200 400 600 800 1000 1200
VR, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (
μ
A)
175oC
100oC
25oC
RHRG30120
www.fairchildsemi.com
2
?2001
Fairchild
S
emiconductor Corporation
RHRG30120
Rev. C1
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